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ICOM 90610616 Epitaxial planar type PNP Silicone Medium Powe

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90610616 ICOM Epitaxial planar type PNP Silicone Medium Power Transistor 906-106-16
ICOM
90610616
5 Items
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ICOM 906-106-16 Epitaxial planar type PNP Silicone Medium Power Transistor

 

2SB1132R Transistor Datasheet. Parameters and Characteristics.



Type Designator: 2SB1132R

Material of transistor: Si

Polarity: PNP

Maximum collector power dissipation (Pc) W: 0.5

Maximum collector-base voltage Ucb V: 40

Maximum collector-emitter voltage Uce V: 40

Maximum emitter-base voltage Ueb V: 6

Maximum collector current Ic max A: 1

Maksimalna temperatura (Tj) °C: 175

Transition frequency (ft) MHz: 150

Collector capacitance (Cc) pF:

Forward current transfer ratio (hFE) min: 180

Noise Figure dB: -

Package of 2SB1132R transistor: SOT89

2024-12-27 07:35:37

Page: 3

90610616 ICOM Epitaxial planar type PNP Silicone Medium Power Transistor 906-106-16

ICOM
90610616
5 Items

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ICOM 90610616 Epitaxial planar type PNP Silicone Medium Powe

90610616 ICOM Epitaxial planar type PNP Silicone Medium Power Transistor 906-106-16

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